IGBT - IXDH20N120 HIGH VOLTAGE IGBTWITHOUT DIODE 1200V 38A

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 350,000 Tomman

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Keywords: IXDH20N120

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247